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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package High allowable collector dissipation. Complement to type 2SD1459 APPLICATIONS For color TV vertical output, sound output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1037 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage INCH Collector-emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -150 -150 -5 -1.5 -3 2.0 UNIT V V V A A Collector current Collector current-peak PC Collector power dissipation TC=25ae 30 175 -55~175 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SB1037 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 IC=-0.5A, IB=-50mA IC=-0.5A, IB=-50mA VCB=-120V;IE=0 VEB=-5V;IC=0 IC=-0.3A ; VCE=-5V IC=-0.1A ; VCE=-5V 70 15 MIN -150 -1.5 -1.2 -10 -10 200 MHz |I |I TYP MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT hFE classifications Q R 100-200 70-140 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SB1037 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SB1037 SEM GE HAN INC OND IC TOR UC 4 |
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